| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photolithography process in which a contact aperture is set small. SOLUTION: In this photolithography method, two line patterns of different line/interval mask are crossed with each other. Consequently, since a contact aperture pattern is formed, an outline of the desired contact aperture is formed on a negative resist. Since the pitch between line and interval mask can be controlled accurately, the limit size of contact aperture (CD) becomes small. Accordingly, difficulty to raise the integration density of device can be eliminated.</p> |
