| 摘要 |
<p>PROBLEM TO BE SOLVED: To secure sufficient oscillation frequencies in a low voltage region of a ring oscillation circuit, to suppress rising of an oscillation frequency in a high voltage region, and to reduce current consumption, as for a MOS type semiconductor integrated circuit device. SOLUTION: This device has a first constant voltage generating circuit 2a composed of a P type MOS enhancement transistor 21 and a N type MOS depletion transistor 22 and a second constant voltage generating circuit 2b composed of a N type MOS depletion transistor 23 and a N type MOS enhancement transistor 24. The first constant voltage generated by the first constant voltage generating circuit is applied to a gate electrode of a P type MOS transistor of transmission gates 26 connected between each inverter circuit 25 constituting a ring oscillation circuit. The second constant voltage generated by the second constant voltage generating circuit is applied to a gate electrode of a N type MOS transistor of the transmission gate 26. An electronic device consisting of compact and durable EEPROM can be realized by using such a ring oscillation circuit.</p> |
