发明名称 |
INFRARED LIGHT SOURCE, ITS MANUFACTURING METHOD, AND INFRARED GAS ANALYZER |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an infrared light source having little variation with time so that individual differences sucbas variation of the relationship between input power and light source intensity differ only slightly each other. SOLUTION: The infrared light source has a filament formed in the shape of a microbridge on a substrate, and emits infrared rays by powering the filament for heating. The substrate is an SOI substrate comprising a monocrystal silicon substrate with a monocrystal silicon layer formed thereon through an insulating film, and the filament is patterned by etching the monocrystal silicon layer and is formed in the shape of a microbridge by etching the monocrystal silicon substrate below the silicon layer.</p> |
申请公布号 |
JP2001221737(A) |
申请公布日期 |
2001.08.17 |
申请号 |
JP20000030821 |
申请日期 |
2000.02.08 |
申请人 |
YOKOGAWA ELECTRIC CORP |
发明人 |
NORO MAKOTO;HARA HITOSHI;KISHI NAOTERU |
分类号 |
H01L21/306;G01J1/08;G01N21/01;G01N21/35;G01N21/3504;G01N21/61;(IPC1-7):G01N21/01 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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