METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device indicating superior characteristics on a substrate where heat-resistance is poor. SOLUTION: In a method for manufacturing a semiconductor device, an amorphous silicon film is formed on a substrate having an insulation surface, and the amorphous silicon film is crystallized to pattern, and an insulation film is formed on the patterned silicon film. A gate electrode is formed on the insulation film, impurities are doped in the patterned silicon film, and beams ranging from near infrared rays to visual lights are irradiated on the patterned silicon film.