发明名称 |
ACTIVE MATRIX TYPE DISPLAY DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electrode connecting structure of the transistor of a pixel part of an active matrix type display device. SOLUTION: The active matrix type display device is characterized in that an organic resin film 210 is provided on the upper side of a substrate 201, a semiconductor film 204 of a thin film transistor, a gate insulating film 203 and a gate electrode 208 and a pixel electrode electrically connected to one impurity region of the semiconductor film and a conductive film electrically connected to the other impurity region of the semiconductor film are formed on the organic resin film 210.</p> |
申请公布号 |
JP2001222029(A) |
申请公布日期 |
2001.08.17 |
申请号 |
JP20000383319 |
申请日期 |
2000.12.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
CHO KOYU;YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO |
分类号 |
G02F1/136;G02F1/1368;G09F9/30;H01L21/20;H01L21/268;H01L21/322;H01L21/336;H01L21/822;H01L27/04;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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