发明名称 ACTIVE MATRIX TYPE DISPLAY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide an electrode connecting structure of the transistor of a pixel part of an active matrix type display device. SOLUTION: The active matrix type display device is characterized in that an organic resin film 210 is provided on the upper side of a substrate 201, a semiconductor film 204 of a thin film transistor, a gate insulating film 203 and a gate electrode 208 and a pixel electrode electrically connected to one impurity region of the semiconductor film and a conductive film electrically connected to the other impurity region of the semiconductor film are formed on the organic resin film 210.</p>
申请公布号 JP2001222029(A) 申请公布日期 2001.08.17
申请号 JP20000383319 申请日期 2000.12.18
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 CHO KOYU;YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO
分类号 G02F1/136;G02F1/1368;G09F9/30;H01L21/20;H01L21/268;H01L21/322;H01L21/336;H01L21/822;H01L27/04;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
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