MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To electively perform a gettering subsequent to a crystallization of a semiconductor film in a method where metallic elements to accelerate the crystallization are introduced in the semiconductor film to crystallize the film. SOLUTION: As a material film having a high tensile stress in contact with a semiconductor film, a silicon nitride film is typically formed. Or metallic elements in a crystalline semiconductor film are made to getter in a material film having a high tensile stress by heating the semiconductor film to remove or reduce the metallic elements and a gettered region 104 is formed.