| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance sensor comprising a semiconductor material containing a conductive inhomogeneity where the dimensions of the inhomogeneity are selected to optimize the magnetoresistance of the sensor. SOLUTION: A symmetric van dar Pauw disk of homogeneous nonmagnetic semiconductor material, such as indium antimonide, with an embedded concentric conducting material, such as gold, inhomogeneity exhibits room temperature geometric extraordinary magnetoresistance (EMR) as high as 100%, 9,100% and 750,000% at magnetic fields of 0.05, 0.25 and 4.0 Tesla, respectively. Moreover, for inhomogeneities of sufficiently large cross section relative to that of the surrounding semiconductor material, the resistance of the disk is field- independent up to an onset field above which the resistance increases rapidly. |
