发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM
摘要 PROBLEM TO BE SOLVED: To prevent formation of boundaries between irradiated surface and non irradiated surface and regions formed repeatedly continuously at the same position, and to improve the uniformity of a resulting semiconductor thin film when a pulse laser beam is continuously scanned. SOLUTION: The outer periphery of a condensing light shape of a laser beam is located at a position not parallel to a scanning direction. Thus, even when the beam is continuously superimposed, formation of boundaries between irradiated surface and non irradiated surface and regions formed repeatedly continuously at the same position can be improved.
申请公布号 JP2001223167(A) 申请公布日期 2001.08.17
申请号 JP20000393158 申请日期 2000.12.25
申请人 NEC CORP 发明人 TANABE HIROSHI
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/20
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