Metal track production for integrated circuits comprises incorporation of titanium layer to prevent diffusion of silicon into copper in metal track

摘要

Integrated circuit production comprises the production of a metal track (7) at the heart of a dielectric inter-track material (1) incorporating an engraving forming a cavity (4), the deposition of a conductive barrier layer (5) in the cavity (4), the filling of the cavity (4) with copper and the deposition of a layer of silicon nitride (8) at a predetermined metallization level. A titanium deposit (6) is realized on at least a part of the barrier layer between the deposition of the barrier layer and the copper filling phases.