METHOD FOR MANUFACTURING STORAGE ELECTRODE OF DYNAMIC RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a storage electrode of a dynamic random access memory(DRAM) device is provided to increase pressure inside a process space, to reduce an output for manufacturing plasma, and to increase power connected to an electric field for accelerating an etching material, in at least an over-etching process. CONSTITUTION: A conductive layer is deposited on an interlayer dielectric(124) having a storage electrode contact(122), and is patterned to form a storage electrode(130) of a dynamic random access memory(DRAM) having a capacitor on bit line(COB) structure. The pressure inside a process space in an over-etching process increases by 30-100 percent as compared with a main etching process.