| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element in which concentration of residual stress is prevented by improving the form of a trench element isolation film. SOLUTION: This manufacturing method for the trench element isolation film contains a first step wherein a wide and round protruding surface is formed at the upper part of a trench by a first etching that is for producing a large quantity of polymer, a second step wherein a side surface perpendicular to the center of the trench is formed by a second etching that is for producing a small quantity of polymer, and a third step wherein a narrow and round recessed surface is formed at the lower part of the trench by a third etching that is for producing a large quantity of polymer to form the trench element isolation film. |
