| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical cavity semiconductor surface emission laser element having good characteristics which oscillates in a 630 nm to 660 nm wavelength range and also provide various optical systems using the same. SOLUTION: Laser oscillation light is emitted from an opening of a p-side electrode 112. The thickness of each layer constituting DBRs 104, 108 is set to an integer times as large as an optical distanceλ/4, and the thickness of clad regions 107, 105 including an active layer 106 is set to an integer times as large as an optical distanceλ/2. For the active layer 106, GaInAsP of such a composition as to provide oscillation light of 635 nm wavelength is used. In part of each DBR, AlInAsP including As in its composition is used. As a result, there are no hillocks generated on the grown surface and a uniform interface can be formed, which improves the characteristics of each DBR, reduces the number of laminations, reduces the resistance of the element, and improves element characteristics such as an oscillation threshold current value and the life. By using this laser element as a light source, various optical systems of a high performance can be realized.
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