RINSING SOLUTION FOR PHOTOLITHOGRAPHY AND METHOD FOR TREATING SUBSTRATE WITH SAME

摘要

PROBLEM TO BE SOLVED: To provide a rinsing solution used particularly for rinsing a substrate after the treatment of residue on ashing with a removing solution in the treatment of the substrate subjected to ashing after dry etching through a photoresist pattern formed on the substrate as a mask and a method for treating a substrate with the rinsing solution. SOLUTION: The rinsing solution for photolithography has pH 8-12 and contains a chelating agent and one or more saccharides.