发明名称 CODE STORAGE CELL OF FLASH MEMORY ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide the code storage cell of a flash memory element required for operating a CAM cell stably even at a low voltage by increasing the coupling ratio of the CAM cell. SOLUTION: The code storage cell of a flash memory element comprises a unit cell 300 having a floating gate 31 and a control gate 32, and a gate coupling part 301 being connected with the unit cell.
申请公布号 JP2001223283(A) 申请公布日期 2001.08.17
申请号 JP20000399596 申请日期 2000.12.27
申请人 HYNIX SEMICONDUCTOR INC 发明人 AHN BYUNG JIN
分类号 H01L21/8247;G11C15/04;G11C16/04;G11C16/06;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 H01L21/8247
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