| 摘要 |
PURPOSE: A semiconductor memory device is provided to divide sense amplifiers into multiple groups and to install pull-up drivers and pull-down drivers for each group, thereby shortening an activation time of overall sense amplifiers and improving bit-line sensitivity. CONSTITUTION: A plurality of bit-lines are formed in one direction with a constant distance there between. A plurality of bit-bar-lines are correspondingly installed between the bit-lines to alternate there with. Further, a plurality of sense amplifiers are formed between the bit-lines and the corresponding bit-bar-lines. The sense amplifiers are divided into multiple groups and separate pull-up drivers and pull-down drivers are installed for each group. A source voltage is selectively inputted to the sense amplifiers of each group by a pull-up control signal which is applied to PMOS transistors of the pull-up driver. And, a ground voltage is selectively inputted to the sense amplifiers of each group by a pull-down control signal being applied to NMOS transistors of the pull-down driver.
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