| 摘要 |
PROBLEM TO BE SOLVED: To provide a lower electrode of capacitor and its manufacturing method which can avoid short circuit between storage node electrodes, with increase of the effective surface area. SOLUTION: The lower electrode of a capacitor is constituted by forming impurity regions at specified regions on a semiconductor substrate 30, forming insulation layers 34, 35 through which contact openings 36 are bored to expose the impurity regions, forming storage node electrodes 50 composed of first and second regions 50a, 50b electrically connected to the impurity regions through the contact openings 36, forming HSGs 60 on the upsides of the storage node electrodes 50, forming an oxide film on the upsides of the HSGs 60, and etching the oxide film. |
