| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device enhanced in a density by stacking a plurality of semiconductor elements. SOLUTION: The semiconductor element 10 is mounted in a face down manner on an insulating circuit board 1, and the semiconductor element 20 is mounted in a face up manner on its upper stage. An opening hole 2 is provided at the board 1 at a position opposed to the element electrode 11 of the element 10 of the lower step surface, and a board electrode 4a of the lower surface of the board 1 is connected to the element electrode 11 of the element 11 via the hole 2. The element electrode 20 of the upper stage is connected to the board electrode 4d of the upper surface of the board 1. |
