| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a titanium silicide film wherein thermal resistance is high and agglomeration is not generated in the case of annealing with a furnace at 900 deg.C for about 30 minutes. SOLUTION: In a titanium silicide manufactured by the conventional manufacturing method of a titanium silicide, sheet resistance is low. Especially in the case that a wiring having a wiring width smaller than a grain size of a TiSi2 film is turned into silicide, the identical low value is not obtained regarding sheet resistance of the TiSi2 film as compared with a case that a wiring having a wiring width greater than the grain size is turned into silicide. In the method of manufacturing a titanium silicide, concentration of oxygen in the vicinity of a surface of silicon is at most 1×1018/cm3, in a process for depositing a nitride titanium film including the larger number of titanium atoms than the number of nitrogen atoms on the silicon, and a process wherein the silicon and the nitride titanium film are made to react with each other by heat treatment and the titanium silicide is formed.
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