| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, which efficiently forms circuit surfaces of a high flatness in a short time while preventing dishing effectively from being generated in a process that the circuits of wirings or the like at the time of the manufacture of the device are formed by a polishing. SOLUTION: A laminated material of a structure that an insulating film 2 provided with recessed parts A for forming wirings is laminated on a semiconductor substrate and a matal film 4 is laminated on the surface of the film 2 comprising the recessed parts via a barrier film 3 is constituted and after a primary polishing process that the film 4 of the laminated material is polished at a high speed in such a way that one part of the film 4 remains on the film 3, in a layer form is executed, a secondary polishing process that a polishing of the remaining film 4 simultaneous with a polishing of the films 2 and 4 is performed using an abrasive, which is slow in the polishing rate of the film 4 and has the ratio of the polishing rate of the film 3 to the polishing rate of the film 4 or more than 0.5 to 1 and the ratio of the polishing rate of the film 4 to the polishing rate of the film 2 of more than 05 to 1, is executed.
|
