METHOD FOR MANUFACTURING SPIN-ON-GLASS LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a spin-on-glass(SOG) layer of a semiconductor device is provided to stably control a subsequent process by forming the SOG layer of a predetermined thickness, and to reduce defects by improving a process margin. CONSTITUTION: A density of ozone in a process for manufacturing a spin-on-glass(SOG) layer is uniformly maintained. The ozone density maintains a uniform range in a soft bake process and a spin coating process out of the process for forming the SOG layer. The ozone density can be from zero to 500 parts per million(PPM).