| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor that is excellent in quality and productivity by reducing generation of crystal and by preventing generation of warping, and a method of manufacturing the same. SOLUTION: In a nitride semiconductor grown on a substrate 1 and in a method of manufacturing the same, after the nitride semiconductor layer 10 is grown on the substrate 1 and a porous layer 2 having number of fine voids 2a is formed in the nitride semiconductor layer 10, a heat treatment is made to form a recrystaized layer 3 by recrystallizing the surface. |
