发明名称 GATE DRIVING DEVICE FOR VOLTAGE DRIVING-TYPE SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To inexpensively provide a driving circuit where the voltage driving- type element of a main circuit can be driven with low loss and low noise and driving ability can arbitrarily be changed. SOLUTION: In a gate driving device, on-voltage is applied to the gate of a voltage driving-type semiconductor element (IGBT1) based on the no-command of a driving signal via a first switching means for on (M1 and M2) and the voltage of a gate is pulled out via a second switching means for off (M3 and M4) based on an off-command, plural output stage units (output stages 1 to 3 and 1a to 3a) constituted of the first switching means for on and the second switching means for off exist. The input side terminal (A to E) of the plural output stage units are connected in parallel. Output side terminals (output signals) are independently installed. The output side terminals are arbitrarily connected to one voltage driving-type semiconductor element (IGBT1). Thus, driving ability can arbitrarily be changed.
申请公布号 JP2001223571(A) 申请公布日期 2001.08.17
申请号 JP20000033721 申请日期 2000.02.10
申请人 FUJI ELECTRIC CO LTD 发明人 KOYABE KAZUNORI;KAWAKAMI HIROYUKI
分类号 H02M1/08;H03K17/04;H03K17/16 主分类号 H02M1/08
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