| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode plate of a plasma etching device, where the electrode plate can be lessened in frequency of cleaning, elongated in service life, and enhanced enough in mechanical strength, restraining plasma from penetrating into the gas flow straightening holes board in it and reaction produces from adhering to the inner walls of the holes in an etching operation. SOLUTION: This electrode plate is used as the upper electrode of a plasma etching device and provided with gas flow straightening holes 2 board in it. When the diameter of the gas inlet-side opening of the gas flow straightening hole 2 is represented by d1, the diameter of the gas outlet-side opening is represented by d2, and a center distance between the adjacent holes 2 is represented by L, these elements d1, d2, and L are so set as to satisfy a formula, d2<d1<<=L/2. It is preferable that the diameter of the gas outlet-side opening of the hole is set at 0.1 to 1.5 mm, and the electrode plate is formed of silicon 0.001 to 50Ω.cm in resistivity.
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