| 摘要 |
PROBLEM TO BE SOLVED: To provide a base wiring formation method and device for obtaining sound wiring structure without any defects in a small recess for forming base wiring. SOLUTION: In a base wiring formation method of by double-electrode DC magnetron sputtering, a target 4 consisting of a base 2 and a conductive material is arranged oppositely in a chamber 1, a high voltage is applied between the base 2 and the target 4, a sputter gas such as an argon gas that is introduced into the chamber 1 is ionized to become an accelerated high-energy particle, hits against the target 4, and a small recess that is formed at the base 2 by the conductive particle that has jumped out is covered or buried. When the process for executing the covering or burial of the small recess that is formed on the surface of the base 2 is to be executed, pressure in the chamber is set to 1.3×10-2-2.7×10-1 Pa, and the potential difference between the base 2 and the target 4 is set to a range of 0.8-30 kV.
|
