| 摘要 |
PROBLEM TO BE SOLVED: To obtain a fundamental transverse mode oscillation up to the high output in a GaN-based semiconductor laser device. SOLUTION: On a sapphire substrate 11, a GaN buffer layer 12 and a GaN layer 13 are grown. Then, a GaN layer 16 is selectively grown in a thickness of about 20μm and then an n-GaN contact layer 17, n-Ga1-z1Alz1N/GaN clad layer 18, n- or i-Ga1-z2Alz2N optical wave guide layer 19, Inx2Ga1-x2N (Si-doped)/ Inx1Ga1-x1N multiple quantum well active layer 20, p-Ga1-z3Alz3N carrier block layer 21, n- or i-Ga1-z2Alz2N optical wave guide layer 22, p-Ga1-z1Alz1N/GaN superlattice first clad layer 23, and n-Ga1-z4Alz4N/GaN superlattice current narrowing layer 24 are deposited. The p-Ga1-z1Alz1N/GaN first clad layer 23 is removed to the middle to form a recess of a width of 2μm. Then, a p-Ga1-z1 Alz1N/GaN superlattice second clad layer 27 and a p-GaN contact layer 28 are formed. In order to get a contact with an n-side electrode 29, both sides of the stripe geometry is removed to the middle of the n-GaN buffer layer 13. Then, a p-side electrode 30 is formed.
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