| 摘要 |
PROBLEM TO BE SOLVED: To commonly use materials of a resistance element and a capacity element of a semiconductor device and to facilitate manufacturing steps. SOLUTION: A dielectric film 33, a first resistor film 34 or a second resistor film 43, a dielectric film 42, and a first resistor film 41, are sequentially laminated on a semiconductor substrate 11 having a semiconductor element 12. Capacity elements 35, 46 are formed of a laminated film of the film 33, the film 34 or 43, the film 42 and the film 41. The resistor film of the laminated film is formed at the resistance element. Accordingly, the respective films can be commonly formed, and hence the manufacturing method can be commonly used to simplify the steps of manufacturing the semiconductor.
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