发明名称 DIELECTRIC THIN FILM, ITS MANUFACTURING METHOD, AND ITS ELECTRONIC PRODUCT
摘要 PROBLEM TO BE SOLVED: To allow an effective use of grating distortion due to misfit grating and reduce leak current, and improve fatigue characteristics. SOLUTION: Substantially one layer of X3}O corresponding to one atom layer of X3}O is inserted into a substrate 10 similar to a thin film in crystalline construction at an appropriate interval while perovskite oxide X1} X2}O3 layer 12 is caused to grow epitaxially. X1} and X3} are Ca or the like, X2}, Ti or the like, and 'O', oxygen. An X3}O layer 14 introduced so that the perovskite structure of the X1} X2}O3 layer 12 is divided, but in a state of extremely high structural fitness with the perovskite structure to form a laminar perovskite structure. The X3}O layer 14 acts as a blocking layer against misfit (grating misfit) dislocation introduction, thus resulting in ferroelectric thin film holding a high grating distortion.
申请公布号 JP2001222913(A) 申请公布日期 2001.08.17
申请号 JP20000341439 申请日期 2000.11.09
申请人 TAIYO YUDEN CO LTD 发明人 SUZUKI TOSHIMASA;IWASAKI YOSHIKI;MORITO KENTARO;SEKIGUCHI SHOICHI;FUJIMOTO MASAYUKI
分类号 C30B29/22;C23C14/08;C23C14/28;H01B3/00;H01B17/60;H01G4/33;H01L21/203;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/105;H01L27/108;H01L41/187;H01L41/316;H01L41/39 主分类号 C30B29/22
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