| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor device, wherein the selectivity ratio of a semiconductor to a photoresist is improved so as to accurately form the expected pattern on a semiconductor substrate when a highly integrated semiconductor device is formed. SOLUTION: This semiconductor device manufacturing method comprises a first process in which an insulating film (20) is formed on a semiconductor substrate 10, second process in which a photoresist pattern (30) is formed on the insulating film (20), third process in which the insulating film (20) is etched using the pattern (30) as a mask to partially expose the substrate (10), and an insulating film pattern is formed, fourth process in which a polymer layer (40) is formed on the surfaces of the photoresist and the insulating film pattern, fifth process in which the exposed part of the substrate (10) is etched using the polymer layer (40) as an etching mask to form an element isolation trench (50), and sixth process in which the trench (50) is filled up with an insulating film for the formation of an element isolation film. A semiconductor device is obtained through the above method. |
