| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a phase shift mask which is lessened in phase collision for improving productivity and reliability, thereby, substantially undesirable lines are removed and making the sizes of shapes fine is made easier. SOLUTION: In the lithography method using the phase shift mask having plural substantially transparent regions and plural substantially opaque regions, the mask patterns shift the phases of at least part of incident light and the phases are substantially equally parted, by which the resolving power of the given lithography system is increased. This method is for manufacturing of semiconductor devices by using the phase shift mask. The productivity and reliability are improved by this invention.</p> |
