发明名称 |
Verfahren zur Durchführung eines Plasmaätzprozesses |
摘要 |
A hard mask is used which is eroded (consumable mask) at a known rate during the etching process. Said mask is initially produced in a thickness such that the etching depth in the semiconductor material is determined as intended due to the comparative etching rates of the material of the mask and of the semiconductor material to the be etched.
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申请公布号 |
DE10004391(A1) |
申请公布日期 |
2001.08.16 |
申请号 |
DE20001004391 |
申请日期 |
2000.02.02 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ENGELHARDT, MANFRED |
分类号 |
G03F7/40;H01J37/32;H01L21/3065;H01L21/66;(IPC1-7):C23F4/00 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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