METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to improve a process yield by preventing the damage of a field oxide of the device, and to simplify a process by performing a self align contact process and a borderless contact process at the same time. CONSTITUTION: A number of gate electrodes(118a,118b) comprising a plurality of spacers(124,132,140,142) are formed on an active region of a semiconductor substrate(100) which is divided into the active region and a field region by a field oxide(104). The outermost spacer among the above spacers is removed to assure a space where a contact hole is to be formed on the semiconductor substrate. An etch-stop layer(136) and an interlayer insulation film(138) are formed on the whole surface of the semiconductor substrate. And, a contact hole revealing the surface of the semiconductor substrate between the gate electrodes and a borderless contact hole revealing the surface of the substrate adjacent to the field oxide and a part of the surface of the field oxide are formed at the same time by etching the interlayer insulation film and the etch-stop layer in sequence.