Low dielectric constant carbon-containing silicon oxide dielectric material for use in integrated circuit structures

摘要

A low dielectric constant multiple carbon-containing silicon oxide dielectric material for an integrated circuit structure is described which comprises a silicon oxide material including silicon atoms which are each bonded to a multiple carbon-containing group consisting of carbon atoms and primary hydrogens. Preferably such multiple carbon-containing groups have the general formula -(C)y(CH3)z, where y is an integer from 1 to 4 for a branched alkyl group and from 3 to 5 for a cyclic alkyl group, and z is 2y + 1 for a branched alkyl group and 2y-1 for a cyclic alkyl group. In one embodiment the low dielectric constant multiple carbon-containing silicon oxide dielectric material is made by reacting with a mild oxidizing agent a multiple carbon-substituted silane having only primary hydrogens bonded to the carbon atoms and having the formula SiHx((C)y(CH3)z)(4-x), where x ranges from 1 to 3, y is an integer from 1 to 4 for a branched alkyl group and from 3 to 5 for a cyclic alkyl group, and z is 2y + 1 for a branched alkyl group and 2y-1 for a cyclic alkyl group.