METHOD AND APPARATUS FOR CONTROLLING PHOTORESIST BAKING PROCESSES

摘要

A method and apparatus for controlling photoresist baking processes. A wafer (205) is provided with the wafer (205) having a layer of photoresist thereon. A first thickness of the photoresist layer is measured by an ellipsometer (275), and a first fourier transform infrared (FTIR) spectra of the photoresist layer is generated by a FTIR spectroscopy (280). Based on the first thickness and first FTIR spectra, a bake time and bake temperature is determined. The wafer (205) is then baked at the bake temperature for the bake time.