Method for programming a flash memory device

摘要

The method for programming a flash memory device includes sequentially loading program data in the page buffer circuit responsive to a first command signal, the first command signal indicating program data input and generating a program voltage responsive to a second command signal, the second command signal indicating programming initiation. EEPROM cells are programmed after the program voltage reaches a predetermined target. All of the programmed EEPROM cells are verified to ensure that they are properly programmed. If the EEPROM cells are not properly programmed, programming is repeated until all of the EEPROM cells are properly programmed. The program voltage is increased in a stepwise manner every time programming is repeated.