Method for manufacturing a capacitor for semiconductor devices

摘要

A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not supplied, and forming an upper electrode on the upper portion of the dielectric thin film.