| 摘要 |
<p>The subject invention relates to an approach for analyzing etched semiconductor samples using optical measurements. In use, one or more optical measurements are taken on an etched semiconductor wafer. At least one of the measurements includes a range of reflectivity measurements in the visible light region. The average reflectivities in the blue and red visible regions are compared to provide information as to whether the sample has been over or under etched. Once this determination is made, a more accurate analysis can be made of the exact structure of the sample. This approach overcomes the difficulties associated with attempting to analyze a sample where the data must be analyzed without knowledge of whether the sample has been over or under etched. The subject approach can also be utilized in other situations which require the treatment of an upper layer of a sample.</p> |
