METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING AMORPHOUS CARBON ANTI-REFLECTIVE COATING FILM

摘要

PURPOSE: A method for fabricating a semiconductor device using an amorphous carbon ARC(Anti-Reflective Coating) film is provided to increase an etching selectivity of the amorphous carbon ARC film as to a photo resist pattern. CONSTITUTION: An amorphous carbon ARC(Anti-Reflective Coating) film(104) is formed on a semiconductor substrate(100). And, the semiconductor substrate is annealed to increase an etching selectivity of the amorphous carbon ARC film as to a photo resist pattern(106) formed on the ARC film. Then, the photo resist pattern is formed on the annealed amorphous carbon ARC film. And, the ARC film is etched using the photo resist pattern as an etch mask. The amorphous carbon ARC film is deposited at a temperature of 150+/- 5 deg.C with a chemical vapor deposition method. And, the ARC film is etched using an etchant gas containing a CHF3.