发明名称 |
VCSEL mit monolithisch integriertem Photodetektor |
摘要 |
The invention relates to a VCSEL that comprises an active layer (47), a photodetector (20, 25) in one of the DBR gratings (15; 40, 50) and a radiation-absorbing layer (25) that lies in the antinode of a laser mode. The laser and the photodetector are electrically controlled via a common contact (35) on a thick, highly doted spacer layer (30) that ensures low laser impedance and low electrical disturbance between the laser and the photodetector.
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申请公布号 |
DE10004398(A1) |
申请公布日期 |
2001.08.16 |
申请号 |
DE20001004398 |
申请日期 |
2000.02.02 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
STEINLE, GUNTHER;WOLF, HANS-DIETRICH |
分类号 |
H01L31/10;H01S5/026;H01S5/183;(IPC1-7):H01S5/183;H01S5/068 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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