| 摘要 |
The present invention discloses a semiconductor memory device and bit line connection method thereof. A control signal for connecting bit line sense amplifiers drives at a high voltage level of Vpp and thereafter is limited as to when it can transition to a power voltage Vdd level or a ground voltage level, thereby reducing a power consumption in data read, write and refresh operations. Accordingly, power consumption of the semiconductor memory device is reduced, in particular, for a memory device that supports a self refresh mode or an automatic refresh mode.
|
