| 摘要 |
When epitaxially growing on an n-type GaAs semiconductor substrate (1), in order, AlGaInP-based semiconductors of an n-type clading layer (3), an active layer, and a p-type cladding layer to provide a doublehetero structure of an overlying light emitting layer forming portion (10), the p-type cladding layer is grown to a carrier concentration of 1x1016 to 5x1016 cm-3. Further, a window laer (6) of a p-type AlGaAs-based compound semiconductor is grown thereon, and a p-side electrode (8) and an n-side electrode (9) are provided. With this structure, the p-type impurity is suppressed to a minimal degree from diffusing into the active layer during growing the semiconductor layers, thereby providing a semiconductor light emitting device that is high in light emitting efficiency and brightness.
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