Characterizing method for mechanical stress state in two-dimensional silicon wafer, involves determining mechanical stress by capacity change for elastic constants and geometry of substrate

摘要

The capacitance change of the electrodes (4a,4b) of a baseplate (2) caused by the deformation of a substrate (1) is measured concerning the substrate. Mechanical stress is then determined by the capacity change for elastic constants and geometry of the substrate as well as the layer thickness of a sample. A capacitive measuring arrangement which includes the baseplate and the electrically conducting or metalized substrate is used to measure the capacity change of the electrodes of the baseplate. The substrate excludes a thermally influenced change of a gap with the baseplate. An independent claim is also included for a characterizing device for mechanical stress in two-dimensional material, e.g. silicon wafer.