发明名称 Memory circuit for preventing rise cell array power source
摘要 The present invention is that, in a memory circuit comprising a cell array and peripheral circuit, the cell array power source is supplied to a circuit which operates during the power-down mode in addition to the cell array. The circuit which operates during the power-down mode is, for example, a self-refresh circuit. A dynamic memory requires refreshing operations in fixed intervals even during the power-down mode. Therefore, the self-refresh circuit is operating even during the power-down mode. Thus, by supplying the cell array power source to the self-refresh circuit, it is possible to consume a prescribed quantity of current from the cell array power source generation circuit to an extent of being able to maintain the level thereof even during the power-down mode. The cell array power source may be maintained within an appropriate voltage range thereby.
申请公布号 US2001014045(A1) 申请公布日期 2001.08.16
申请号 US20010776909 申请日期 2001.02.06
申请人 FUJITSU LIMITED 发明人 KITAMOTO AYAKO;MORI KAORU
分类号 G11C11/407;G11C11/401;G11C11/403;G11C11/406;G11C11/4074;G11C11/409;(IPC1-7):G11C7/00 主分类号 G11C11/407
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