| 摘要 |
PURPOSE: A semiconductor device is provided to improve a short channel effect, by preventing the reduction of an effective channel length at a channel edge of a transistor by varying the length of a gate electrode partially. CONSTITUTION: A semiconductor substrate(300) is divided into an active region(301) where a transistor will be fabricated and an isolation region(302) to isolate active regions electrically. A word line(303) is formed crossing vertically the active region, and a source(304) and a drain(305) are formed in the active region on both sides of the word line. A part formed on an upper part of the active region among the word line is a gate electrode(303a). A length(L1) of the gate electrode on an upper surface of the edge of the active region is longer than a length(L2) of the gate electrode on an upper surface of the center part of the active region.
|
