发明名称 Substrate processing method and substrate processing apparatus
摘要 A developing unit, a coating unit and a plurality of cooling plates are arranged in a process station which performs a resist coating and so on and a wafer is transferred among them by a substrate transfer device. The temperature of an area to where the wafer is transferred is detected by a temperature/humidity detector and the temperature of the wafer which is cooled by the cooling plates is adjusted accordingly based on a detected value so that the temperature of the wafer when transferred to the coating unit becomes a coating temperature of a processing solution. Thereby, the wafer is transferred to the coating unit while maintaining its temperature with high accuracy to be coated with a resist solution, so that a formation of an uneven processing due to the temperature change can be prevented and a uniform processing can be performed.
申请公布号 US2001014372(A1) 申请公布日期 2001.08.16
申请号 US20000737473 申请日期 2000.12.18
申请人 TOKYO ELECTRON LIMITED 发明人 KATANO TAKAYUKI;MATSUI HIDEFUMI;KITANO JUNICHI;SUZUKI YO;YAMASHITA MASAMI;AOYAMA TORU;IWAKI HIROYUKI;SHIMURA SATORU
分类号 H01L21/027;B05C11/08;H01L21/00;H01L21/677;(IPC1-7):B05D3/00;B05C13/00 主分类号 H01L21/027
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