发明名称 Semi-sacrificial diamond for air dielectric formation
摘要 Disclosed is a structure and process for incorporating air or other gas as a permanent dielectric medium in a multilevel chip by providing CVD diamond as a semi-sacrificial interlevel and intralevel dielectric material. The semi-sacrificial dielectric is subsequently at least partially removed in an isotropic oxygen etch. A variation of the disclosure includes providing a final, permanent CVD diamond encapsulant to contain the gaseous dielectric medium within the chip.
申请公布号 US2001014526(A1) 申请公布日期 2001.08.16
申请号 US20010825653 申请日期 2001.04.04
申请人 CLEVENGER LAWRENCE A.;HSU LOUIS LU-CHEN 发明人 CLEVENGER LAWRENCE A.;HSU LOUIS LU-CHEN
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
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