发明名称 |
Semi-sacrificial diamond for air dielectric formation |
摘要 |
Disclosed is a structure and process for incorporating air or other gas as a permanent dielectric medium in a multilevel chip by providing CVD diamond as a semi-sacrificial interlevel and intralevel dielectric material. The semi-sacrificial dielectric is subsequently at least partially removed in an isotropic oxygen etch. A variation of the disclosure includes providing a final, permanent CVD diamond encapsulant to contain the gaseous dielectric medium within the chip.
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申请公布号 |
US2001014526(A1) |
申请公布日期 |
2001.08.16 |
申请号 |
US20010825653 |
申请日期 |
2001.04.04 |
申请人 |
CLEVENGER LAWRENCE A.;HSU LOUIS LU-CHEN |
发明人 |
CLEVENGER LAWRENCE A.;HSU LOUIS LU-CHEN |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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