发明名称 |
Method for decreasing surface defects of patterned resist layer |
摘要 |
Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether) disulfonic acids.
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申请公布号 |
US2001014431(A1) |
申请公布日期 |
2001.08.16 |
申请号 |
US20010771563 |
申请日期 |
2001.01.30 |
申请人 |
NITTA KAZUYUKI;NAKAO TAKU;MAEMORI SATOSHI;MATSUMI TATSUYA |
发明人 |
NITTA KAZUYUKI;NAKAO TAKU;MAEMORI SATOSHI;MATSUMI TATSUYA |
分类号 |
H01L21/027;G03F7/38;G03F7/40;(IPC1-7):G03F7/30;G03F7/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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