发明名称 Level shifter
摘要 In a level shifter including a latch consisting of two p-channel transistors P1 and P2, when an input signal at a terminal IN changes from H- into L-level, an n-channel transistor N2 turns ON, thereby dropping a potential level at a node W2. However, since a p-channel transistor P4 is OFF, no short-circuit current flows from a high voltage supply VDD3 into the ground by way of the transistors P2 and N2. On the other hand, since n- and p-channel transistors N1 and P3 are OFF, both terminals of a node W1 are electrically isolated. But the high voltage supply VDD3 pulls the node W1 up to a high voltage level by way of the p-channel transistors P4 and P1 and another p-channel transistor P5 as a resistor. Accordingly, the capacitance to be driven by the n-channel transistors N1 and N2 can be reduced, thus shortening the delay.
申请公布号 US2001013795(A1) 申请公布日期 2001.08.16
申请号 US20010777575 申请日期 2001.02.07
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NOJIRI NAOKI
分类号 H03K3/356;H03K17/10;H03K19/0185;(IPC1-7):H03K19/017 主分类号 H03K3/356
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