SEMICONDUCTOR DEVICES

摘要

High quality epitaxial layers of compound semiconductor materials can be gro wn overlying large silicon wafers by first growing an accommodating buffer laye r (24) on a silicon wafer (22). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalli ne compound semiconductor layer (26). Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken car e of by the amorphous interface layer. Semiconductor devices may be formed in both the monocrystalline compound semiconductor layer and the silicon. Semiconductor devices (56, 68, 78, 92) may be formed in both the monocrystalline compound semiconductor layer and the silicon.