| 摘要 |
The first shield pattern is provided between an inductor and the surface of a semiconductor substrate under the inductor. The first shield pattern has plural concave slittings from the side of the edge toward the inside. The second shield pattern provides a convex area which is located on the surface of the semiconductor substrate in correspondence with the slitting wherein metallic silicide is formed and a connection area which is provided on the surface of the semiconductor substrate and in which metallic silicide is formed for connecting plural convex areas.
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