发明名称 |
INTEGRATED CIRCUIT FABRICATION |
摘要 |
An improved method of capacitor formation is disclosed. A dielectric is etched with a etch recipe which creates grooves within an opening. The opening is filled with metal which conforms to the grooves, thereby creating a capacitor's lower plate with increased surface area. The metal is later surrounded with dielectric and metal, which forms respectively the capacitor's dielectric and upper plate.
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申请公布号 |
US2001013615(A1) |
申请公布日期 |
2001.08.16 |
申请号 |
US19980024601 |
申请日期 |
1998.02.17 |
申请人 |
LEE KUO-HUA;MOLLOY SIMON JOHN;VITKAVAGE DANIEL JOSEPH |
发明人 |
LEE KUO-HUA;MOLLOY SIMON JOHN;VITKAVAGE DANIEL JOSEPH |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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