发明名称 INTEGRATED CIRCUIT FABRICATION
摘要 An improved method of capacitor formation is disclosed. A dielectric is etched with a etch recipe which creates grooves within an opening. The opening is filled with metal which conforms to the grooves, thereby creating a capacitor's lower plate with increased surface area. The metal is later surrounded with dielectric and metal, which forms respectively the capacitor's dielectric and upper plate.
申请公布号 US2001013615(A1) 申请公布日期 2001.08.16
申请号 US19980024601 申请日期 1998.02.17
申请人 LEE KUO-HUA;MOLLOY SIMON JOHN;VITKAVAGE DANIEL JOSEPH 发明人 LEE KUO-HUA;MOLLOY SIMON JOHN;VITKAVAGE DANIEL JOSEPH
分类号 H01L21/02;H01L21/8242;(IPC1-7):H01L27/108 主分类号 H01L21/02
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